13N80 fqa13n80 equivalent, fqa13n80.
* 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V
* Low gate charge ( typical 68 nC)
* Low Crss ( typical 30pF) www.DataSheet4U.com
* Fast switching
* 100% a.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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