FQP13N10 January 2001 QFET FQP13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB013N10RE3 Spec. No. : C056E3 Issued Date : 2016.11.01 Revised Date : Page No. :

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB013N10RQ8 Spec. No. : C053Q8 Issued Date : 2016.08.26 Revised Date : 2016.08.29

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP13N10 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistanc

13N10 N-Channel 100-V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.092 at VGS = 10 V ID (A) 18 TO-220AB D FEATU

FQP13N10L — N-Channel QFET® MOSFET FQP13N10L N-Channel QFET® MOSFET 100 V, 12.8 A, 180 mΩ December 2013 Description This N-Channel enhancement mode

FQD13N10L / FQU13N10L December 2000 QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode powe

FQPF13N10 January 2001 QFET FQPF13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB013N10RJ3 Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. :

HRD13N10K_HRU13N10K HRD13N10K / HRU13N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Exc

isc N-Channel MOSFET Transistor ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for r

Elektronische Bauelemente SSG13 10S-C 13A, 100V, RDS(O ) 9mΩ -Channel Fast Switching MOSFET RoHS Compliant Product A suffix of “-C” specifies haloge

CYStech Electronics Corp. Spec. No. : C056H8 Issued Date : 2016.08.29 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTB013N

FQPF13N10L December 2000 QFET FQPF13N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transis

ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME13N10A is the N-Channel logic enhancement mode power field effect transis

NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE013N10RJ3 Spec. No. : C056J3 Issued Date : 2017.04.10 Revised Date : 2020.10.21

FQD13N10 / FQU13N10 January 2001 QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff

FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff