13N10 Datasheet | Specifications & PDF Download

NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche Tested  Pb-free lead plating;

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; Ro

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT10N100 IXFT12N100 IXFT13N100 V DSS I D25 1000 V 10 A

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ISZ113N10NM5LF2 MOSFET OptiMOSTM 5 Linear FET 2, 100 V Features • Ideal for soft start in Power-over-Ethernet (PoE) application • Very low on-resista

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB013N10RQ8 Spec. No. : C053Q8 Issued Date : 2016.08.26 Revised Date : 2016.08.29

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB013N10RE3 Spec. No. : C056E3 Issued Date : 2016.11.01 Revised Date : Page No. :

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions

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FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP13N10 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistanc

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MOSFET - Power, Single N-Channel 100 V, 13.6 mW, 52 A Product Preview NVTYS013N10MCL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design •

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13N10 N-Channel 100-V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.092 at VGS = 10 V ID (A) 18 TO-220AB D FEATU

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CYStech Electronics Corp. Spec. No. : C056H8 Issued Date : 2016.08.29 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTB013N

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; Ro

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High conversion efficiency  Pb-free lead plat

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; Ro

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FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff

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FQB13N10L / FQI13N10L December 2000 QFET FQB13N10L / FQI13N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode powe

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB013N10RJ3 Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. :

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CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design fo

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