11N40C fqp11n40c equivalent, fqp11n40c.
* 10.5 A, 400 V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A
* Low Gate Charge (Typ. 28 nC)
* Low Crss (Typ. 85 pF)
* 100% Avalanche Tested
Descrip.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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