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Unisonic Technologies

11N50 Datasheet Preview

11N50 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
11N50
Preliminary
11A, 500V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 11N50 is an N-channel enhancement mode power
MOSFET. It uses UTC advanced planar stripe, DMOS technology to
provide customers perfect switching performance, minimal on-state
resistance. It also can withstand high energy pulse in the avalanche
and commutation mode.
The UTC 11N50 is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
„ FEATURES
* RDS(ON)=0.55@ VGS=10V
* Fast Switching
* With 100% Avalanche Tested
„ SYMBOL
2.Drain
1
1
1
1
Power MOSFET
TO-220
TO-220F
TO-220F1
TO-262
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N50L-TA3-T
11N50G-TA3-T
11N50L-TF1-T
11N50G-TF1-T
11N50L-TF3-T
11N50G-TF3-T
11N50L-T2Q-T
11N50G-T2Q-T
Package
TO-220
TO-220F1
TO-220F
TO-262
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-462.d




Unisonic Technologies

11N50 Datasheet Preview

11N50 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

11N50
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
500 V
Gate to Source Voltage
VGSS
±30 V
Continuous Drain Current
TC=25°C
TC=100°C
ID
11 (Note 2)
7 (Note 2)
A
A
Pulsed Drain Current (Note 3)
IDM
44 (Note 2)
A
Single Pulsed Avalanche Energy(Note 4)
Peak Diode Recovery dv/dt (Note 5)
EAS
dv/dt
670 mJ
4.5 V/ns
TO-220
195
TC=25°C
TO-220F1
TO-220F
40
48
W
Power Dissipation
TO-262
TO-220
PD
195
1.56
Derate above TO-220F1
25°C
TO-220F
0.32
0.39
W/°C
TO-262
1.56
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating : Pulse width limited by maximum junction temperature
4. L=10mH, IAS=11A, VDD= 50V, RG=25, Starting TJ=25°C
5. ISD 11A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F1
TO-220F
TO-262
SYMBOL
θJA
θJC
RATINGS
62.5
0.64
3.1
2.58
0.64
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-462.d


Part Number 11N50
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
Total Page 6 Pages
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