NDP710BE Datasheet N-Channel Enhancement Mode Field Effect Transistor

Manufacturer: Fairchild (now onsemi)

Overview: May 1994 NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect.

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NDP710BE n-channel enhancement mode field effect transistor by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	NDP710BE
Manufacturer	Fairchild (now onsemi)
File Size	74.01 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Download	NDP710BE Download (PDF)

General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.

These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

42 and 40A, 100V. RDS(ON) = 0.038 and 0.042Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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