NDP7052 transistor equivalent, n-channel enhancement mode field effect transistor.
75 A, 50 V. RDS(ON) = 0.01 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need f.
such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.
Image gallery