NDP608A Datasheet N-Channel Enhancement Mode Field Effect Transistor

Manufacturer: Fairchild (now onsemi)

NDP608A n-channel enhancement mode field effect transistor by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	NDP608A
Manufacturer	Fairchild (now onsemi)
File Size	73.90 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDP608A Datasheet

General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.

These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Overview

May 1994 NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect.

Key Features

36 and 32A, 80V. RDS(ON) = 0.042and 0.045Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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