NDP510BE transistor equivalent, n-channel enhancement mode field effect transistor.
15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need.
such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.
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