NDP5060L transistor equivalent, n-channel logic level enhancement mode field effect transistor.
26 A, 60 V. RDS(ON) = 0.05 Ω @ VGS= 5 V RDS(ON) = 0.035 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain d.
such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.
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