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NDP408AE - N-Channel Enhancement Mode Field Effect Transistor

Fairchild

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Datasheet Details

Part number: NDP408AE
Manufacturer: Fairchild
File Size: 73.06 KB
Datasheet: NDP408AE_FairchildSemiconductor.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

NDP408AE Product details

Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology..

Features

12 and 11A, 80V. RDS(ON) = 0.16 and 0.20Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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N-Channel Enhancement Mode Field Effect Transistor Fairchild

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