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3418 - POWER MOSFET

Description

Wafer Diameter: 8 inchs.

Wafer Thickness: 8 mils.

Die Size: 960 µm ×810µm.

Scribe Line Width: 60µm

Metallization: Frontside: AL/Cu, Backside: Ti/Ni/Ag.

Frontside: 4µm, Backside: 1.4µm.

Bonding

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Datasheet Details

Part number 3418
Manufacturer FUMAN
File Size 109.30 KB
Description POWER MOSFET
Datasheet download datasheet 3418 Datasheet

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Full PDF Text Transcription

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SHENZHEN FUMAN ELECTRONICS CO., LTD. 3418 (：S&CIC0937) POWER MOSFET WAFER DATASHEET Feature  30V P-channel MOSFET High Dense Design.  Ultra low On-Resistance.  RDS(ON) <53mΩ @ VGS=-10V  RDS(ON) <65mΩ @ VGS=-4.5V  Reliable and Rugged  Gross die: 38K D 3 xxxxxx 1 2 G S SOT-23 Applications  Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Die Description  Wafer Diameter: 8 inchs. (±0.1 inchs)  Wafer Thickness: 8 mils. (±0.6mils)  Die Size: 960 µm ×810µm. (Including scribe line)  Scribe Line Width: 60µm  Metallization: Frontside: AL/Cu, Backside: Ti/Ni/Ag.  Metal Thickness: Frontside: 4µm, Backside: 1.4µm.  Bonding Area: Gate: 120µm ×120µm. Source: Full metalized surface of source region  Recommended Wire Bounding Gate: 1.
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