* VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.7mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current <.

FNK75N08BD General Features
* VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.7mΩ)
* High density cell des.

TheFNK75N08BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK75N08BD General Features
* VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.7mΩ) .

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