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100V N-Channel MOSFET
The FNK10N01D have been fabricated using the advanced MOSTMhigh voltage process that is designed to deliver high levels of performance and robustness in switching application By providing low R ,DS(on) Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power designs.
FNK01N01D
D
G S
General Features
● VDS = 100V,ID =100A RDS(ON) < 213mΩ @ VGS=10V (Typ:200m Ω)
TO-251S top view
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Maximum 100 ±20 100 65 340 16 12
Avalanche energy L=0.
FNK01N01D Datasheet
