FNK6A-1 mosfet equivalent, n-channel power mosfet.
* VDS = 19V,ID =6A RDS(ON) <23mΩ @ VGS=2.5V RDS(ON) < 19m Ω @ VGS=4.5V
D1 G1
G2
D2
S1 S2 Schematic diagram
* High Power and current handing capability
* .
The FNK6A-1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
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