* VDS = 60V,ID =60A RDS(ON) < 11m Ω@ VGS=10V (Typ:8.0m Ω)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdso.

General Features
* VDS = 60V,ID =60A RDS(ON) < 11m Ω@ VGS=10V (Typ:8.0m Ω)
* Special process technology for .

TheFNK60N60AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 60V,ID =60A RDS(ON) < 11m Ω@ VGS=10V (Typ:8.0m Ω)
* Spec.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts