* VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and cu.

General Features
* VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V Schematic diagram
* High density cell design f.

The FNK 60N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V Schematic diagram
*.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts