FNK4620 transistor equivalent, complementary enhancement mode field effect transistor.
n-channel
VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 21mΩ (VGS=10V) < 27mΩ (VGS=4.5V)
p-channel
-30V
-5.3A (VGS = -10V) RDS(ON)
< 30mΩ (VGS = -10V) < 44mΩ (VGS = -4.5V).
Features
n-channel
VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 21mΩ (VGS=10V) < 27mΩ (VGS=4.5V)
p-channel
-30V
-5.3A .
The FNK4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.
Features
n-channel
VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 21mΩ (VGS=.
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