FNK4610D mosfet equivalent, n-channel power mosfet.
* VDS = 100V,ID =73A RDS(ON) < 12.2m Ω @ VGS=10V
(Typ:8.6mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low R.
FNK4610D
General Features
* VDS = 100V,ID =73A RDS(ON) < 12.2m Ω @ VGS=10V
(Typ:8.6mΩ)
* Special process te.
The FNK4610D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK4610D
General Features
* VDS = 100V,ID =73A RDS(ON) < 12.2m Ω @ VGS=10V
(Typ:8.6mΩ).
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