FNK22001 mosfet equivalent, n-channel power mosfet.
* VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V
(Typ:6.3mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current <.
FNK22001
General Features
* VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V
(Typ:6.3mΩ)
* High density cell desig.
The FNK22001 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK22001
General Features
* VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V
(Typ:6.3mΩ)
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