FNK22001D mosfet equivalent, n-channel power mosfet.
* VDS =85V,ID =210A RDS(ON) <4.1mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good sta.
General Features
* VDS =85V,ID =210A RDS(ON) <4.1mΩ @ VGS=10V
* High density cell design for ultra low Rdson <.
The FNK22001D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =85V,ID =210A RDS(ON) <4.1mΩ @ VGS=10V
* High density cell d.
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