Datasheet Summary
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK04N 04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =40V,ID =90A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.2m Ω)
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation
Schematic diagram
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Marking and pin assignment
Top View
Bottom View
DFN5X6
Package Marking and...