FNK04N04 mosfet equivalent, n-channel power mosfet.
* VDS =40V,ID =90A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.2m Ω)
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability.
General Features
* VDS =40V,ID =90A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.2m Ω)
High density cell design for ultra low R.
The FNK04N 04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =40V,ID =90A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.2m Ω)
High density .
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