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■■ APPLICATION：POWER AMPLIFIER APPLICATION、 SWITCHING APPLICATION. ■■MAXIMUM RATINGS （Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg 30 10 6 2 750 150 V V V A mW ℃
C3279
—NPN silicon —
﹣55~150 ℃
■■ ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL hFE ICBO IEBO BVCBO 30 10 6 0.86 0.2 150 27 1.5 0.5 MIN. 140 TYP. MAX. UNIT 600 0.1 0.1 µA µA V V V V V MHz PF TEST CONDITION VCE= 1V，Ic=500 mA VCB=30 V，IE=0 VEB= 6V，Ic=0 Ic= 0.1mA，IE=0 Ic= 10mA，IB=0 IE= 1mA，Ic=0 VCE= 1V，Ic= 2A Ic= 2A，IB= 50mA Ic= 0.
C3279 Datasheet
