Datasheet Summary
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- - APPLICATION: High Voltage Switching Applications.
- NPN silicon
- -
- MAXIMUM RATINGS（Ta＝25℃）
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC TJ Tstg RATING UNIT 300 300 7 100 1 150 V V V mA W ℃
1
TO-92L
1. Emitter 2. Collector 3. Base
﹣55~150 ℃
- - ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation...