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FLM5964-4F - C-Band Internally Matched FET

General Description

D .

The FLM5964-4F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system.

Key Features

  • . c.
  • High Output Power: P1dB = 36.5dBm (Typ. ) U.
  • High Gain: G1dB =10.0dB (Typ. ) 4 t.
  • High PAE: ηadd = 37% (Typ. ) e = 25.5dBm.
  • Low IM3 = -46dBc@Po e.
  • Broad Band: 5.9h ~ 6.4GHz S.
  • Impedance Matched Zin/Zout = 50Ω aSealed Package t.
  • Hermetically a.

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Datasheet Details

Part number FLM5964-4F
Manufacturer Eudyna Devices
File Size 281.53 KB
Description C-Band Internally Matched FET
Datasheet download datasheet FLM5964-4F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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wEudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 36.5dBm (Typ.) U • High Gain: G1dB =10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 25.5dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.9h ~ 6.4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically a DESCRIPTION D . The FLM5964-4F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system.