FLL410IK-3C fet equivalent, l-band high power gaas fet.
High Output Power: Pout=46.0dBm(Typ.) High Gain: GL=13.0dB(Typ.) High PAE: ηadd=52%(Typ.) Broad Band: 2.5~2.7GHz Hermetically Sealed Package DESCRIPTION The FLL410IK-3C i.
as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent.
The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5
– 2.7 GHz band amplifiers. This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, hig.
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