PTB20148
PTB20148 is 60 Watts/ 925-960 MHz Cellular Radio RF Power Transistor manufactured by Ericsson.
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PTB 20148 60 Watts, 925- 960 MHz Cellular Radio RF Power Transistor
Description
The 20148 is a class AB, NPN, mon emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
60 Watts, 925- 960 MHz Class AB Characteristics 50% Min Collector Efficiency at 60 Watts Gold Metallization Silicon Nitride Passivated
Gain vs. Frequency
(as measured in a broadband circuit)
VCC = 25 V
Gain (d B)
ICQ = 200 m A Pout = 60 W
201 48
LO TC OD E
8 920
Frequency (MHz)
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
40 65 4.0 8.0 145 0.83
- 40 to +150 1.2
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20148
Electrical Characteristics
Characteristic...
