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PTB 20141 18 Watts, 1.465–1.513 GHz Cellular Radio RF Power Transistor
Description
The 20141 is a class AB, NPN, common emitter RF power transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
18 Watts, 1.465–1.513 GHz Class AB Characteristics 45% Min Collector Efficiency at 9 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
30
Output Power (Watts)
25 20 15 10 5 0 0
VCC = 23 V ICQ = 50 mA f = 1.
PTB20141 Datasheet
