PTB20080
PTB20080 is 25 Watts/ 1.6-1.7 GHz RF Power Transistor manufactured by Ericsson.
Description
Th PTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.
25 Watts, 1.6- 1.7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power & Efficiency vs. Input Power
40 80
Output Power (Watts)
VCC = 26 V
ICQ = 125 m A f = 1.65 GHz
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Efficiency (%)
2008 0
EXX X
Input Power (Watts)
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25° C Above 25° C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
50 50 4.0 3.4 123 0.7 150 1.43
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20080
Electrical Characteristics
Characteristic
Breakdown Voltage C to B Breakdown Voltage E to B Cut-off Current C to E DC Current Gain (100% Tested) e
Conditions
VBE = 0 V, IC = 15 m A IC = 5 m A VCE = 26 V VCE = 5 V, IC = 2...
