PTB20080
Overview
ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications.
| Part | PTB20080 |
|---|---|
| Description | 25 Watts/ 1.6-1.7 GHz RF Power Transistor |
| Category | Transistor |
| Manufacturer | Ericsson |
| Size | 445.22 KB |
Related Datasheets
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