PTB20080 Datasheet (Ericsson)

Part PTB20080
Description 25 Watts/ 1.6-1.7 GHz RF Power Transistor
Category Transistor
Manufacturer Ericsson
Size 445.22 KB
Ericsson

PTB20080 Overview

Key Specifications

Description

ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications.

Price & Availability

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