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Ericsson

PTB20017 Datasheet Preview

PTB20017 Datasheet

150 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

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PTB 20017
150 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20017 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz cellular
radio frequency band. Rated at 150 watts minimum output power, it
may be used for both CW and PEP applications. Ion implantation,
nitride surface passivation and gold metallization are used to ensure
excellent device reliability. 100% lot traceability is standard.
• 150 Watts, 860–900 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 150 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
240
200
160
120
80
40
0
0
VCC = 25 V
ICQ = 200 mA (per side)
f = 900 MHz
7 14 21
Input Power (Watts)
28
35
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20017LOT CODE
Package 20224
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
60
4.0
25
330
1.89
–40 to +150
0.53
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1




Ericsson

PTB20017 Datasheet Preview

PTB20017 Datasheet

150 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

No Preview Available !

PTB 20017
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 100 mA
VBE = 0 V, IC = 100 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 1 A
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
25
55
3.5
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 25 Vdc, Pout = 150 W, ICQ = 200 mA per side,
f = 900 MHz)
Collector Efficiency
(VCC = 25 Vdc, Pout = 150 W, ICQ = 200 mA per side,
f = 900 MHz)
Intermodulation Distortion
(VCC = 25 Vdc, Pout = 150 W(PEP), ICQ = 200 mA per side,
f1 = 899 MHz, f2 = 900 MHz)
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 150 W(PEP), ICQ = 200 mA per side
f = 900 MHz—all phase angles at frequency of test)
Symbol Min
Gpe 8.0
ηC 50
IMD —
Ψ
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 150 W, ICQ = 200 mA per side)
Z Source
Z Load
e
Typ
30
70
5
50
Max
100
Units
Volts
Volts
Volts
Typ Max Units
9.0 —
dB
——
%
-28 — dBc
— 5:1
Frequency
MHz
860
880
900
Z Source
R jX
3.4 -6.7
3.1 -6.1
2.9 -5.6
Z Load
R jX
3.5 -3.1
3.4 -2.6
3.2 -2.1
2


Part Number PTB20017
Description 150 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
Maker Ericsson
PDF Download

PTB20017 Datasheet PDF






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