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Ericsson

PTB20008 Datasheet Preview

PTB20008 Datasheet

10 Watts/ 935-960 MHz Cellular Radio RF Power Transistor

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PTB 20008
10 Watts, 935–960 MHz
Cellular Radio RF Power Transistor
Description
The 20008 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
• 10 Watts, 935–960 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 10 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
15.0
12.5 VCC = 24 V
ICQ = 100 mA
10.0 f = 960 MHz
7.5
5.0
2.5
0.0
0.2
0.4 0.6 0.8
Input Power (Watts)
1.0
1.2
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20008LOT CODE
Package 20201
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
50
4.0
6.7
65
0.4
–40 to +150
2.7
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1




Ericsson

PTB20008 Datasheet Preview

PTB20008 Datasheet

10 Watts/ 935-960 MHz Cellular Radio RF Power Transistor

No Preview Available !

PTB 20008
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 100 mA
VBE = 0 V, IC = 100 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 1 A
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
25
55
3.5
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 24 Vdc, Pout = 10 W, ICQ = 100 mA, f = 960 MHz)
Collector Efficiency
(VCC = 24 Vdc, Pout = 10 W, ICQ = 100 mA, f = 960 MHz)
Intermodulation Distortion
(VCC = 24 Vdc, Pout = 10 W(PEP), ICQ = 100 mA,
f1 = 959.999 MHz, f2 = 960.000 MHz)
Load Mismatch Tolerance
(VCC = 24 Vdc, Pout = 10 W, ICQ = 100 mA
f = 960 MHz—all phase angles at frequency of test)
Symbol Min
Gpe 9.5
ηC 50
IMD —
Ψ
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 24 Vdc, Pout = 10 W, ICQ = 100 mA)
Z Source
Z Load
e
Typ
30
70
5
50
Max
120
Units
Volts
Volts
Volts
Typ Max Units
10 11.5
——
dB
%
-32 — dBc
— 30:1
Frequency
MHz
935
960
Z Source
R jX
1.5 -2.1
3.5 4.6
Z Load
R jX
1.6 2.3
2.1 -3.8
2


Part Number PTB20008
Description 10 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
Maker Ericsson
PDF Download

PTB20008 Datasheet PDF






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