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Ericsson

PTB20007 Datasheet Preview

PTB20007 Datasheet

30 Watts/ 935-960 MHz Cellular Radio RF Power Transistor

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PTB 20007
30 Watts, 935–960 MHz
Cellular Radio RF Power Transistor
Description
The 20007 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation across the 935 to 960 MHz frequency
band. Rated at 30 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
• 30 Watts, 935–960 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 30 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
60
50
40
30
20 VCC = 24 V
ICQ = 200 mA
10 f = 960 MHz
0
0 2 4 6 8 10
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
9/28/98
1
20007LOT CODE
Package 20200
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
50
4.0
10
175
1.0
–40 to +150
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W




Ericsson

PTB20007 Datasheet Preview

PTB20007 Datasheet

30 Watts/ 935-960 MHz Cellular Radio RF Power Transistor

No Preview Available !

PTB 20007
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 100 mA
VBE = 0 V, IC = 100 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 1 A
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
25
55
3.5
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 24 Vdc, Pout = 30 W, ICQ = 200 mA, f = 935 MHz)
Collector Efficiency
(VCC = 24 Vdc, Pout = 30 W, ICQ = 200 mA, f = 935 MHz)
Intermodulation Distortion
(VCC = 24 Vdc, Pout = 30 W(PEP), ICQ = 200 mA,
f1 = 935 MHz, f2 = 936 MHz)
Load Mismatch Tolerance
(VCC = 24 Vdc, Pout = 30 W, ICQ = 200 mA
f = 935 MHz—all phase angles at frequency of test)
Symbol Min
Gpe 9.0
ηC 50
IMD —
Ψ
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 24 Vdc, Pout = 30 W, ICQ = 200 mA)
Z Source
Z Load
e
Typ
30
70
5
50
Max
100
Units
Volts
Volts
Volts
Typ Max Units
10.0 —
——
dB
%
-33 — dBc
— 10:1
Frequency
MHz
935
960
Z Source
R jX
5.2 -2.5
4.8 -2.0
Z Load
R jX
4.8 -3.6
2.1 -2.8
5/19/98
2


Part Number PTB20007
Description 30 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
Maker Ericsson
PDF Download

PTB20007 Datasheet PDF






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