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Ericsson

PTB20003 Datasheet Preview

PTB20003 Datasheet

4 Watts/ 915-960 MHz Cellular Radio RF Power Transistor

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PTB 20003
4 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20003 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 915 to 960 MHz frequency
band. Rated at 4 Watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
• Specified 25 Volts
• 4 Watts, 915–960 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 4 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
12
10
8
6
4
2
0
0.00
VCC = 25 V
ICQ = 50 mA
f = 960 MHz
0.15 0.30 0.45 0.60
Input Power (Watts)
0.75
20003LOT CODE
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
50
4.0
1.7
35
0.2
–40 to +150
5.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1




Ericsson

PTB20003 Datasheet Preview

PTB20003 Datasheet

4 Watts/ 915-960 MHz Cellular Radio RF Power Transistor

No Preview Available !

PTB 20003
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 50 mA
VBE = 0 V, IC = 50 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 250 mA
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
25
55
4
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 25 Vdc, Pout = 4 W, ICQ = 50 mA, f = 960 MHz)
Collector Efficiency
(VCC = 25 Vdc, Pout = 4 W, ICQ = 50 mA, f = 960 MHz)
Intermodulation Distortion
(VCC = 25 Vdc, Pout = 4 W(PEP), ICQ = 50 mA,
f1 = 959.999 MHz, f2 = 960.000 MHz)
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 4 W, ICQ = 50 mA,
f = 960 MHz—all phase angles at frequency of test)
Symbol Min
Gpe 11
ηC 50
IMD —
Ψ
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 4 W, ICQ = 50 mA)
Z Source
Z Load
e
Typ
30
70
5
50
Max
120
Units
Volts
Volts
Volts
Typ Max Units
13 —
——
dB
%
-28 — dBc
— 30:1
Frequency
MHz
915
935
960
Z Source
R jX
6.7 -1.8
6.8 -1.3
6.8 -0.7
Z Load
R jX
6.8 15.5
6.9 16.0
7.0 17.0
2


Part Number PTB20003
Description 4 Watts/ 915-960 MHz Cellular Radio RF Power Transistor
Maker Ericsson
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PTB20003 Datasheet PDF






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