F59D4G81A datasheet, memory equivalent, Elite Semiconductor

F59D4G81A memory equivalent, 4 gbit (512m x 8 / 256m x 16) 1.8v nand flash memory.

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Features and benefits

* Voltage Supply: 1.8V (1.7V ~ 1.95V)
* Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M.

Description

The device is a 512Mx8bit with spare 16Mx8bit capacity (or 256Mx16bit with spare 8Mx16bit capacity). The device is offered in 1.8V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The .

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