• Part: F59D4G81XB
  • Description: 1.8V NAND Flash Memory
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 2.44 MB
F59D4G81XB Datasheet (PDF) Download
Elite Semiconductor Microelectronics Technology
F59D4G81XB

Description

NAND Flash devices include an asynchronous data interface for high-performance I/O operations.

Key Features

  • Voltage Supply: 1.8V (1.7 V ~ 1.95V)
  • Open NAND Flash Interface (ONFI) 1.0-pliant
  • Single-level cell (SLC) technology
  • Organization
  • Page size: 4352 bytes (4096 + 256 bytes) - Block size: 64 pages - Number of planes: 1 - Device size: 4Gb
  • Asynchronous I/O performance - tRC/ tWC: 30ns
  • mand set: ONFI NAND Flash Protocol
  • 1.8V NAND Flash Memory
  • Programmable drive strength - Read unique ID - Internal data move
  • Operation status byte provides software method for detecting - Operation pletion - Pass/ fail condition - Write-protect status