F59D2G81A datasheet, memory equivalent, Elite Semiconductor

F59D2G81A memory equivalent, 2 gbit (256m x 8 / 128m x 16) 1.8v nand flash memory.

Features and benefits

* Voltage Supply: 1.8V (1.7V ~ 1.95V)
* Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M.

Description

The device is a 256Mx8bit with spare 8Mx8bit capacity (or 128Mx16bit with spare 4Mx16bit capacity). The device is offered in 1.8V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The m.

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