Datasheet4U Logo Datasheet4U.com

F59D2G161A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory

Download the F59D2G161A datasheet PDF. This datasheet also covers the F59D2G81A variant, as both devices belong to the same 2 gbit (256m x 8 / 128m x 16) 1.8v nand flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The device is a 256Mx8bit with spare 8Mx8bit capacity (or 128Mx16bit with spare 4Mx16bit capacity).

The device is offered in 1.8V VCC Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Voltage Supply: 1.8V (1.7V ~ 1.95V).
  • Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit - Data Register: (1K + 32) x 16bit.
  • Automatic Program and Erase x8: - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte x16: - Page Program: (1K + 32) word - Block Erase: (64K + 2K) word.
  • Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (F59D2G81A-EliteSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number F59D2G161A
Manufacturer Elite Semiconductor
File Size 1.54 MB
Description 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
Datasheet download datasheet F59D2G161A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
F59D2G81KA 1.8V NAND Flash Memory ESMT
F59D2G81KA-45BCG2N 1.8V NAND Flash Memory ESMT
F59D2G81KA-45BG2N 1.8V NAND Flash Memory ESMT
F59D2G81KA-45TG2N 1.8V NAND Flash Memory ESMT
F59D2G81XA-45BG2B 2 Gbit (256M x 8) 1.8V NAND Flash Memory ESMT

Other Datasheets by Elite Semiconductor

Part Number Description
F59D2G81A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D4G161A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
F59D4G81A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit - Data Register: (1K + 32) x 16bit  Automatic Program and Erase x8: - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte x16: - Page Program: (1K + 32) word - Block Erase: (64K + 2K) word  Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 350us (Typ.) - Block Erase time: 3.5ms (Typ.) F59D2G81A / F59D2G161A 2 Gbit (256M x 8 / 128M x 16) 1.