10N65F Overview
Description
The 10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- VDS = 650V ID =10A RDS(ON) < 0.9Ω @ VGS=10V （Type：0.75Ω） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC)
