3N156A - P-channel Transistor

Download the 3N156A datasheet PDF. This datasheet also covers the 3N155A variant, as both devices belong to the same p-channel transistor family and are provided as variant models within a single manufacturer datasheet.

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3N156A p-channel transistor by Unknown Manufacturer - Datasheet Preview — Note: The manufacturer provides a single datasheet file (3N155A-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	3N156A
Manufacturer	Unknown Manufacturer
File Size	279.15 KB
Description	P-channel Transistor
Datasheet	3N156A Datasheet

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3N150S	N-Channel MOSFET	INCHANGE
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Other Datasheets by Unknown Manufacturer

Part Number	Description
3N153	SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
3N154	SILICON MOS TRANSISTOR
3N155A	P-channel Transistor
3N157A	P-channel Transistor
3N158A	P-channel Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3N 155,A (SILICON) 3N156,A P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed for chopper and switching application. CASE 20 (T0-72) O2 o STYLE Z PIN 1. SOURCE Z. GATE 1 000 3 3. DRAIN 4. SUBSTRATE AND CASE LEAD MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS 1D PD TJ Tstg Value 35 35 50 30 300 1.7 -65 to +175 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW;oC °c °c HANDLING PRECAUTIONS: MOS field-effect transistors have extremely high input resistance. They can be damaged by the accumulation of excess static charge.