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2N5361 - Silicon N-channel junction field-effect transistors

Download the 2N5361 datasheet PDF. This datasheet also covers the 2N5358 variant, as both devices belong to the same silicon n-channel junction field-effect transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5358-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5361
Manufacturer Unknown Manufacturer
File Size 377.32 KB
Description Silicon N-channel junction field-effect transistors
Datasheet download datasheet 2N5361 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5358 (SILICON) thru 2N5364 Silicon N-channel junction field-effect transistors depletion mode (Type A) devices designed primarily for general-purpose amplifier applications. CASE 20 (TO-72) 102 3 4 STYLE 3 PIN 1. 2. 3. 4. DRAIN SOURCE GATE CASE LEAD MAXIMUM RATINGS Rating Forward Gate Current Reverse Gate-Source Voltage Drain-Gate Voltage Total Device Dissipation @TA =25° C Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol IG(f) VGS(r) VDG PD Tstg TJ Value Unit 10 mAdc 40 Vdc 40 Vdc 300 2.
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