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2N5361 - N-Channel JFETs

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General Description

The 2N5361 thru 2N5364 series of N-channel JFETs is characterized for general purpose audio and RF amplifiers requiring tightly specified IdSS ranges.

Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation (25°C Free-Air Temperature) Power Derating (to +175°C) Storage Temperature Range Operating Temperature Range Lead Temperature (1/16" from case for 10 seconds) -40V 10mA 300 mW 2 mW/°C -65°C to +200°C -65°C to +175°C 300°C TO-72 0.175-0.195 (4.445-4.953) SEATING PLANE 0.2O9-Q.23O (5.309-5.842) 0.170 21 —(4JUT5~334) 1 Vi i 1 « ' !

nSii U U [] M.N 0.O16-O.O19 i^ | * (0.406-0.483) ' 0.030 (0~JfiZ) MAX 0.050 H"""""^ (2.540) (1.2701*1 i I 0.036-0.046 ^^ J }/ 45'' S / ^V>^_p>^ 0.02B-0.04B // \/ (0.914-1.168) (6.7)1-1.219) PIN FET 1 S 2 D 3 G 4 Case Electrical Characteristics (25c unless otherwise noted) 'GSS PARAMETER Gate Reverse Current CONDITIONS VDS = 0, VQS--20V T= 150°C 2N5361 MIN MAX -100 -100 2N5362 MIN MAX -100 -100 2N5363 MIN MAX 100 -100 2N5364 MIN MAX 100 -100 UNITS pA nA Gate-Source Cutoff VGS(off) ..

Overview

Process 55 2N5361-64 N-Channel JFETs General.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ETC 2N5361 Silicon N-channel junction field-effect transistors ETC

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