2N5346 - MEDIUM-POWER NPN SILICON TRANSISTORS

Datasheet Details

Part number	2N5346
Manufacturer	Unknown Manufacturer
File Size	365.52 KB
Description	MEDIUM-POWER NPN SILICON TRANSISTORS
Datasheet	2N5346 Datasheet

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53462N (SILICON) thru 2N5349 MEDIUM-POWER NPN SILICON TRANSISTORS · .. designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 7.0 Adc • DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in the Compact, High Dissipation TO-59 Case • Isolated Collector Configuration 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base CUrrent Total Device Dissipation@ TC = 25'C Derate above 25°C Operating and storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD TJ• Tstg 2NS346 2NS347 80 2NS348 2NS349 100 80 100 6.0 7.0 1.