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F25L02PA-100DG - 3V Only 2 Mbit Serial Flash Memory

Download the F25L02PA-100DG datasheet PDF. This datasheet also covers the F25L02PA variant, as both devices belong to the same 3v only 2 mbit serial flash memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • S y Single supply voltage 2.7~3.6V y Standard, Dual SPI y Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz; 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz/ 100MHz (100MHz / 172MHz/ 200MHz equivalent Dual SPI) y Low power consumption - Active current: 25 mA - Standby current: 30 μ A - Deep Power Down current: 5 μ A y Reliability - 100,000 typical program/erase cycles - 20 years Data Retention y Program - Page programming time: 1.5 ms (typical) F25L02PA 3V Only 2 Mb.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (F25L02PA-EliteSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number F25L02PA-100DG
Manufacturer ESMT
File Size 431.76 KB
Description 3V Only 2 Mbit Serial Flash Memory
Datasheet download datasheet F25L02PA-100DG Datasheet

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Other Datasheets by ESMT

Part Number Description
F25L02PA-100HG 3V Only 2 Mbit Serial Flash Memory
F25L02PA-100HIG2F 3V Only 2 Mbit Serial Flash Memory
F25L02PA-100PAG 3V Only 2 Mbit Serial Flash Memory
F25L02PA-100PAIG2F 3V Only 2 Mbit Serial Flash Memory
F25L02PA-100PG 3V Only 2 Mbit Serial Flash Memory

Full PDF Text Transcription

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ESMT Flash „ FEATURES y Single supply voltage 2.7~3.6V y Standard, Dual SPI y Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz; 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz/ 100MHz (100MHz / 172MHz/ 200MHz equivalent Dual SPI) y Low power consumption - Active current: 25 mA - Standby current: 30 μ A - Deep Power Down current: 5 μ A y Reliability - 100,000 typical program/erase cycles - 20 years Data Retention y Program - Page programming time: 1.5 ms (typical) F25L02PA 3V Only 2 Mbit Serial Flash Memory with Dual Output y Erase - Chip erase time 2 sec (typical) - Block erase time 0.
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