EN27LN2G08 datasheet, memory equivalent, EON

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Features and benefits

* Voltage Supply: 2.7V ~ 3.6V
* Organization - Memory Cell Array : (256M + 16M) x 8bit - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - Page.

Description

EN27LN2G08_Preliminary The device is a 256Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided in.

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