EN27LN1G08 datasheet, memory equivalent, EON

Features and benefits

* Voltage Supply: 2.7V ~ 3.6V
* Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase.

Application

such as solid state file storage and other portable applications requiring non-volatility. Pin Configuration NC NC NC .

Description

EN27LN1G08 Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V VCC. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be perfo.

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