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GP200MHS18 - Half Bridge IGBT Module

Features

  • s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY.

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Datasheet Details

Part number GP200MHS18
Manufacturer Dynex Semiconductor
File Size 135.70 KB
Description Half Bridge IGBT Module
Datasheet download datasheet GP200MHS18 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GP200MHS18 GP200MHS18 Half Bridge IGBT Module DS5304-3.1 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 200A 400A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) 9(C1) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP200MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
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