GP2400ESM12 Description
GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive...
GP2400ESM12 Key Features
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- Channel Enhancement Mode Non Punch Through Silicon High Gate Input Impedance Optimised For High Power High Frequency Ope