ZXTN2018FQ transistor equivalent, 60v npn medium power transistor.
* BVCEO > 60V
* Maximum Continuous Collector Current IC = 5A
* VCE(SAT) < 45mV @ 1A
* RCE(SAT) = 25mΩ
* High Power Dissipation SOT23 (Type DN) Package.
Features
* BVCEO > 60V
* Maximum Continuous Collector Current IC = 5A
* VCE(SAT) < 45mV @ 1A
* RCE(SAT).
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.
Features
* BVCEO > 60V
* Maximum Continuous Collector Current IC = 5A
* VCE(SAT) < 45mV @ 1A
* RCE(SAT) = 25mΩ
* High.
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