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ZXMS6004DT8Q - N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET

Description

The ZXMS6004DT8Q is a dual self protected low side MOSFET with logic level input.

It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality.

Features

  • Compact Dual Package.
  • Low Input Current.
  • Logic Level Input (3.3V and 5V).
  • Short Circuit Protection with Auto Restart.
  • Over Voltage Protection (active clamp).
  • Thermal Shutdown with Auto Restart.
  • Over-Current Protection.
  • Input Protection (ESD).
  • High Continuous Current Rating.
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable.
  • Lead-Free Finish; RoHS compliant (Note 1 & 2).
  • Halogen and Antimony Free. “Green” Device (N.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INFORMATION ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary  Continuous Drain Source Voltage VDS = 60V  On-State Resistance 500mΩ  Nominal Load Current (VIN = 5V) 1.2A  Clamping Energy 210mJ Description The ZXMS6004DT8Q is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004DT8Q is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.