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ZXMHC10A07N8 - MOSFET H-Bridge

Description

This new generation complementary MOSFET H-Bridge

Features

  • low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features.
  • 2 x N + 2 x P channels in a SOIC package P1D/N1D P2D/N2D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com A Product Line of Diodes Incorporated ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 0.70Ω @ VGS= 10V N-CH 100V 2.9nC 0.90Ω @ VGS= 6.0V 1.00Ω @ VGS= -10V P-CH -100V 3.5nC 1.45Ω @ VGS= -6.0V -0.7A 0.9A -0.9A ID TA= 25°C 1.0A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features • 2 x N + 2 x P channels in a SOIC package P1D/N1D P2D/N2D Applications • • DC Motor control DC-AC Inverters N1G N2G N1S/N2S Ordering information Device ZXMHC10A07N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 Device marking ZXMHC 10A07 Issue 1.0 - March 2009 © Diodes Incorporated 1 www.diodes.com www.
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