FMMT591Q transistor equivalent, pnp medium power transistor.
* BVCEO > -60V
* IC = -1A High Continuous Collector Current
* ICM = -2A Peak Pulse Current
* RSAT = 295mΩ for a Low Equivalent On-Resistance
* hFE cha.
Features
* BVCEO > -60V
* IC = -1A High Continuous Collector Current
* ICM = -2A Peak Pulse Current
* R.
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.
Features
* BVCEO > -60V
* IC = -1A High Continuous Collector Current
* ICM = -2A Peak Pulse Current
* RSAT = 295mΩ.
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